| 000 | nam a22 7a 4500 | ||
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| 999 |
_c4062 _d4062 |
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| 008 | 200723b xxu||||| |||| 00| 0 vie d | ||
| 020 | _a9810233264 | ||
| 082 | 0 | 4 |
_223rd ed. _a539.72 _bO375 |
| 100 | _aOldham, Timothy R | ||
| 245 | 1 | 0 |
_aLonizing radiation effects in mos oxides _cTimothy R Oldham |
| 260 |
_aSingapore _bWorld Scientific _c1999 |
||
| 300 |
_axiv, 171 p. _c23cm |
||
| 490 | _aInternational advances in solid state electronics and technology | ||
| 520 | 3 | _aThis volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. | |
| 653 | _aCơ bản | ||
| 942 |
_2ddc _cBK |
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